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june 2015 docid027519 rev 3 1 / 14 this i s information on a product in full production. www.st.com STL130N6F7 n - channel 60 v, 0.003 typ., 130 a stripfet? f7 power mosfet in a powerflat? 5x6 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STL130N6F7 60 v 0.0035 130 a ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on - state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packaging STL130N6F7 130n6f7 powerflat tm 5x6 tape and reel
contents STL130N6F7 2 / 14 docid027519 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 5 3 test circuits ................................ ................................ ..................... 7 4 package mechanical data ................................ ............................... 8 4.1 powerflat? 5x6 type c package information ................................ 9 4.2 pow erflat? 5x6 packing information ................................ ........... 11 5 revision history ................................ ................................ ............ 13
STL130N6F7 electrical ratings docid027519 rev 3 3 / 14 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t c = 25 c 130 a i d (1) drain current (continuous) at t c = 100 c 95 a i dm (1) (2) drain current (pulsed) 520 a i d (3) drain current (continuous) at t pcb = 25 c 26 a i d (3) drain current (continuous) at t pcb = 100 c 19 a i dm (2) (3) drain current (pulsed) 104 a p tot (1) total dissipation at t c = 25 c 125 w p tot (3) total dissipation at t pcb = 25 c 4.8 w t j operating junction temperature - 55 to 175 c t stg storage temperature notes: (1) this value is rated according to r thj - c (2) pulse width limited by safe operating area (3) this value is rated according to r thj - pcb table 3: thermal data symbol parameter value unit r thj - pcb (1) thermal resistance junction - pcb max. 31.3 c/w r thj - case thermal resistance junction - case max. 1.2 c/w notes: (1) when mounted on fr - 4 board of 1 inch2, 2oz cu, t < 10 sec
electrical characteristics STL130N6F7 4 / 14 docid027519 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = 1 ma, v gs = 0 v 60 v i dss zero gate voltage drain current v gs = 0 v v ds = 60 v 1 a i gss gate - body leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 13 a 0.003 0.0035 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 2600 - pf c oss output capacitance - 1200 - pf c rss reverse transfer capacitance - 115 - pf q g total gate charge v dd = 30 v, i d = 26 a, v gs = 10 v - 42 - nc q gs gate - source charge - 13.6 - nc q gd gate - drain charge - 13 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 26 a, r g = 4.7 , v gs = 10 v - 24 - ns t r rise time - 44 - ns t d(off) turn - off delay time - 62 - ns t f fall time - 24 - ns table 7: source - drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd =26 a, v gs = 0 v - 1.2 v t rr reverse recovery time i d = 26 a, di/dt = 100 a/s v dd = 48 v - 50 ns q rr reverse recovery charge - 56 nc i rrm reverse recovery current - 2.2 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
STL130N6F7 electrical characteristics docid027519 rev 3 5 / 14 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance i d 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj < 175c t c = 25c single pulse 10 100 10s gipd 1 10520151416fsr i d 80 40 0 v ds (v) 2 (a) 0 v gs = 7, 8, 9, 10 v 6v 5v 4v 4 120 160 6 8 3v gipd28042015 1 137fsr i d 100 50 0 v gs (v) 2 (a) 0 v ds = 6 v 4 150 6 8 gipd28042015 1 144fsr v gs 4 2 0 10 30 q g (nc) 20 (v) 0 40 6 8 10 v dd = 30 v i d = 26 a 12 50 gipd280420151205fsr r ds(on) 2.96 5 10 20 i d (a) 15 (m) 2.88 25 3.04 3.12 v gs = 10v 3.20 gipd2804201512 1 1fsr
electrical characteristics STL130N6F7 6 / 14 docid027519 rev 3 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics c 100 0.1 1 v ds (v) 10 (pf) 10 ciss coss crss f= 1mhz 1000 10000 gipd280420151219fsr r ds(on) 1.0 t j (c) (norm) 0.2 0.6 1.4 1.8 v gs = 10v i d = 13 a -75 -25 75 25 125 175 2.2 gipd280420151227fsr v (br)dss 1.00 -75 -25 75 t j (c) 25 (norm) 0.96 125 0.98 1.02 1.04 i d = 1m a 175 gipd280420151232fsr v sd 0.7 5 10 20 i sd (a) 15 (v) 0.5 25 0.6 0.8 0.9 t j = 175c t j = -55c t j = 25c gipd280420151236fsr
STL130N6F7 test circuits docid027519 rev 3 7 / 14 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
package mechanical data STL130N6F7 8 / 14 docid027519 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STL130N6F7 package mechanical data docid027519 rev 3 9 / 14 4.1 powerflat? 5x6 type c package information figure 19 : powerflat? 5x6 type c package outline
package mechanical data STL130N6F7 10 / 14 docid027519 rev 3 table 8: powerflat? 5x6 type c mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.20 e 6.15 d2 4.11 4.31 e2 3.50 3.70 e 1.27 e1 0.65 l 0.715 1.015 k 1.05 1.35 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28 figure 20 : powerflat? 5x6 recommended footprint (dimensions are in mm)
STL130N6F7 package mechanical data docid027519 rev 3 11 / 14 4.2 powerflat? 5x6 packing information figure 21 : powerflat? 5x6 tape (dimensions are in mm) figure 22 : powerflat? 5x6 package orientation in carrier tape
package mechanical data STL130N6F7 12 / 14 docid027519 rev 3 figure 23 : powerflat? 5x6 reel
STL130N6F7 revision history docid027519 rev 3 13 / 14 5 revision history table 9: document revision history date revision changes 17 - feb - 2015 1 first release. 11 - may - 2015 2 updated and section 2: "electrical characteristics" added section 2.1: "electrical characteristics (curves)" updated section 4: "package mechanical data" minor text changes. 30 - jun - 2015 3 document status promoted from preliminary to production data.
STL130N6F7 14 / 14 docid027519 rev 3 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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